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€ 5,00
Merk : nexperia type : bsp31 spanning : 80v stroom : 1a case : sot223 prijs voor 30 stuks, verzenden 1,31 euro
Merk : infineon type : ipp60r180 gate treshold voltage : 3,5v (typ) vds : 650v pd: 72 watt rds :< 0,145 ohm (typ) id : 22a (45
Algemeen uitvoering pnp type bipolar transistoren technologie si ontwerp sot-32 base product number bd136 fabricaat : phi elektri
This device is designed for use in switching regulators and motor control and has a low collection emitter saturation voltage and
€ 7,50
Characteristics of bdt92 transistor type: pnp collector-emitter voltage, max: -60 v collector-base voltage, max: -60 v emitter-bas
Type bfr84 merk philips pol: n-channel behuizing to72-4 vds 20 volt id 50 ma noise fig 2,3 db typ. Note: including 2x gate/source
€ 3,00
Pnp germanium alloy transistors intended as low power amplifier in af applications (1965->). Merk: philips ac188: pnp vceo: 1
€ 6,00
Npn/pnp germanium alloy transistors intended as low power amplifier in af applications (1965->). Merk: philips ac187/03: npn ac
€ 3,50
Merk philips case to18 vds 180v id 300ma rdson 6 ohm yfs typ 250 ma/v vgs 0,7 ... 2,7V ton 10 ns (max) toff 15 ns (max)
Type designator: bss72 mfr : motorola material of transistor: si polarity: npn maximum collector power dissipation (pc): 0.5 W max
Purpose: pnp silicon alloy transistor intended as pre-amplifier in af applications under high temperatures. Type designator: bcz12
Fabrikant : vishay/ v.h. Ir type : irfpf50 case: to-247ac pol: n-channel vds : 900v rdson : <1,6 ohm id : 6,7a ptot : 190w tris
€ 10,00
Manufacturer sgs-thomson marking but11fi vceo 400v ic 5a pc 40w ton/toff 1/0,8 us case to220 full pack opmerking : transistors heb
Merk : fairchild cased: to3 uout : +5v iout : 1,5 a prijs voor 8 stuks
€ 2,50
Merk lambda type llm350 (nos) behuizing to3 polariteit pos max current 3a spanningsbereik 1,2..33 Volt prijs per stuk
€ 0,50
Product specifications: type transistor germanium pnp manufacturer philips case to72 maximum collector power dissipation (pc) 83 m
Merk valvo materiaal germanium vceo 60v, 32v (oc76) ic 250 ma pt 165 mw ft 350 khz hfe > 15 meten goed, prijs per stuk
Pnp silicon epitaxial transistor intended as broadband amplifier. Type designator: bfq51 material of transistor: si made by phili
The oc44 is a pnp germanium transistor used for rf applications with an ft of 8 mhz. It was aimed at low rf frequencies and was us
Case to1 type transistor silicon pnp manufacturer volvo vbr cbo32v vbr ceo32v max. Pd (w)415m derate (amb) (w/°c)2.5M hfe 40 ic ma
It is primarily intended for use in uhf and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spect
Merk: philips type: 2n2218 case: to39 vceo: 30v pc: 3w ic: 0,8a ft: 250 mhz
Merk: philips polariteit: pnp vceo: 40v ic: 0,6a ptot: 3w ft: 200 mhz turn on/off time: 21/80ns case: to39
Merk: fairchild pol: pnp vceo: 40v pc: 400mw ic: 600ma ft: 200mhz prijs is voor 50 stuks, verzenden in envelop voor 1,31 euro
Merk = philips vceo = 45v ic= 1a pd=0,8w hfe= 30 ft= 250mhz turn_on/0ff time= 35/60 ns case= to39
Use for general industrial applications type designator: bfs92 material of transistor: si polarity: pnp maximum collector power di
High gain germanium p-n-p transistor merk : philips type designator: ac128k material of transistor: ge polarity: pnp maximum colle
Gereserveerd
Merk : philips type:bfw11 (nos) vds: 30v igf: 10ma pd: 300mw case: to72 note: bfw11 is bijna gelijk aan bfw10 prijs voor 15 stuks
Merk: philips type: af118 polariteit: pnp vceo: 70v ic: 30ma pc: 0,375 watt ft: 175 mhz case: to7 laatste 2! Getest op tin-whisker
The bfy51 is a silicon planar epitaxial npn transistors in jedec to-39 metalcase. They are intended for general purpose linear and
