BLF578XR LDMOD Power Transistor

BLF578XR LDMOD Power Transistor 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon"s XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.
Features and benefits
 Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an
IDq of 40 mA, a tp of 100 s with  of 20 %:
 Output power = 1400 W
 Power gain = 23.5 dB
 Efficiency = 69 %
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (HF to 500 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmitter applications

Dit is een onverwoestbare RF Power Transistor die zelfs bij hele hoge SWR niet kapot gaat. Deze is van NXP, dus geen fake Chinese troep.

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