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Dit is een NOS transistor HEMT FHX35LGT

FEATURES
• Low Noise Figure: 1.2dB (Typ.)@f=12GHz
• High Associated Gain: 10.0dB (Typ.)@f=12GHz
• Lg ≤ 0.25um, Wg = 280um
• Gold Gate Metallization for High Reliability
• Cost Effective Ceramic Microstrip (SMT) Package
• Tape and Reel Packaging Available
DESCRIPTION
The FHX35LG & FHX35LP are a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2 to18GHz frequency range. This device is packaged in cost effective, low parasitic, hermetically sealed(LG) or epoxy-sealed(LP) metal-ceramic packages for high volume telecommunication, DBS, TVRO, VSAT or other low noise applications.
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Sinds 3 jan '26
Advertentienummer: m2351431988